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Heavy Ion, High-Energy, and Low-Energy Proton SEE Sensitivity of 90-nm RHBD SRAMs
We measure the sensitivity of different 90-nm SRAM cells to single-event upsets (SEUs) caused by heavy ions, high energy protons, and low energy protons. We discuss radiation hardened by designExpand
Robust SEU Mitigation of 32 nm Dual Redundant Flip-Flops Through Interleaving and Sensitive Node-Pair Spacing
We introduce the 32 nm SOI Boeing Interleaved Flip-Flop, which is based on the DICE topology with additional RHBD layout enhancements. Sensitive node pairs were separated by interleaving elements ofExpand
Predicting the Single-Event Error Rate of a Radiation Hardened by Design Microprocessor
We describe the approach used to calculate and verify on-orbit upset rates of radiation hardened microprocessors. System designers use these error rates to choose between microprocessors and addExpand
A method for efficient Radiation Hardening of multicore processors
This paper describes a method for developing Radiation Hardened by Design (RHBD) multicore processor Integrated Circuits (ICs) that meet specific single-event error rate targets in space environmentsExpand
An age-aware library for reliability simulation of digital ICs
A general method for creating an age-aware library of cells, including the impact of multiple reliability degradation mechanisms, is presented. The underlying degradation models take into account keyExpand
2013 December Special NSREC Issue of the IEEE Transactions on Nuclear Science List of Reviewers
Jonathan Ahlbin, University of Southern California Dave Alexander, COSMIAC Michael Alles, Vanderbilt University Tony Amort, Boeing Oluwole Amuson, Lockheed Martin Sarah Armstrong, NSWC Crane LaurentExpand
Estimating SEE Error Rates for Complex SoCs With ASERT
This paper describes the ASIC Single Event Effects (SEE) Error Rate Tool (ASERT) methodology to estimate the error rates of complex System-on-Chip (SoC) devices. ASERT consists of a top-down analysisExpand