T.-Y Yew

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TDDB of High-k/metal gate (HK/MG) based NMOS in 16nm FinFET technology has been evaluated. In this paper, we investigated the impacts of channel current during transient and V<sub>gd</sub> assisted recovery during off-state half cycle on TDDB lifetime and voltage acceleration factor (VAF). A 64-DUT array with AC signals on both gate and drain was(More)
Conventional time consuming methodology and idealistic stress conditions are no longer satisfactory under fierce competition between advanced technology development approaches. In this paper, the effectiveness of test arrays with simple built-in self-test (BIST) design in FinFET high-k/metal gate (HK/MG) technology have been demonstrated through three(More)
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