T. V. Perevalov

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Electronic structure of oxygen vacancies and poly-vacancies in high-k dielectric Al<inf>2</inf>O<inf>3</inf> (&#x03B1;- and &#x03B3;- phases) was calculated from the first principles. It was found, that oxygen vacancies can be both electron and hole trap in &#x03B1;- and &#x03B3;-Al<inf>2</inf>O<inf>3</inf>. Our results give a reason to believe that high(More)
We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount ( 10–15%) of hafnium sub-oxides HfOy (y < 2). Spatial potential fluctuations, due to chemical compound(More)
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