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To achieve the requirements of ITRS nodes < 45nm, beamline implantation is now limited in terms of low energies. Plasma immersion ion implantation (PIII) is thus an alternative doping technique for the formation of ultra shallow junctions for source/drain extension in silicon devices. In this study, we present some results obtained on the PIII prototype(More)
We present results on ultra-shallow junction formation for the sub 65 nm CMOS node by means of a long pulse laser thermal process (LP-LTP). This method achieve to form abrupt and ultra-shallow junctions with low resistivities, but the different irradiated structures like transistor gates need to be preserved. To assess the integration of the laser process(More)
Laser-materials interaction is the fascinating nexus where laser physics, optical physics, and materials science intersect. Applications include microdeposition via laser-induced forward transfer of thin films, clean materials processing with femtosecond beams, creating color filters with nanoparticles, generating very high density storage sites on(More)
We investigate applications of laser-induced boron-doping of silicon as a new technology which offers number of unique and very promising applications to MEMS: (i) it is proven that doping levels up to 3.10/sup 21/ at/cm/sup 3/ can be produced, that is 10 times more than the maximum levels, which are usually limited by the solid solubility 3-6.10/sup 20/(More)
Silicon nano-wires were fabricated using thin Silicon on Insulator (SOI) wafers and a combination of anisotropic wet etching by TetraMethyl Ammonium Hydroxide (TMAH) and Local Oxidation of Silicon (LOCOS). These nano-wires were submitted to laser exposure using gas immersion laser doping (GILD). The result was the formation of either periodic(More)
Heavily boron-doped single-crystalline silicon bridges have been fabricated and their resonances have been characterized. Silicon was doped with boron by shooting XeCl laser in BCl/sub 3/ precursor gas. Thanks to the high tensile stress induced by doping, the resonant frequency of the bridge shifted to more than 10 times higher than that of stress-free(More)
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