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For the needs of high electron mobility transistors (HEMTs) optimization a reliable software simulation tool is required. Due to the high electric field in the device channel a hydrodynamic approach is used to properly model the electron transport. We modify an existing hydrodynamic mobility model in order to achieve a better agreement with Monte Carlo (MC)(More)
A thorough approach to the investigation of GaNbased high-electron mobility transistors by device simulation is demonstrated. Due to structure and material peculiarities, new comprehensive hydrodynamic models for the electron mobility are developed and calibrated. Relying on this setup, three different independent device technologies are simulated and(More)
This paper presents details of a self-diplexing dual antenna system and associated antenna interface module. The manufactured demonstrator operates efficiently in 4 GSM bands and 3 UTRA bands with antennas that are just 6 mm high. It is shown that the VSWR can be maintained below approximately 4:1 in all modes no matter how the phone containing the antennas(More)
This paper introduces an improved nonintrusive near-field technique for in situ characterization of distributed effects in GaN high-power transistors. Compared with previous passive probing approaches which sense electric fields induced by drain bondwires, the proposed method employs the position-signal difference method to measure the E-field fluctuations(More)
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