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Silicon planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz. Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR. Minimizing area(More)
Low-power building blocks for a serial transmitter operating up to 86 Gb/s are designed and implemented in a 130-nm SiGe BiCMOS technology with 150-GHz f<sub>T</sub> SiGe HBT. Power reduction is achieved by employing a low-voltage 2.5-V BiCMOS logic family, and by trading off bias current for inductive peaking. A serial transmitter test chip is fabricated(More)
This paper presents the status of high-speed SiGe BiCMOS technologies at STMicroelectronics. Process and electrical characteristics of two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical and millimeter-wave circuits. Advanced developments addressing end-of-roadmap BiCMOS are also presented and(More)
The paper presents an overview of Si MOSFET, SiGe HBT, and InP HBT device and circuit performance for broadband and tuned millimeter-wave applications. Implementations of CMOS-only, SiGe-HBT-only, SiGe BiCMOS, and InP-HBT 30-80 Gb/s high-speed circuit in production 130-nm SiGe BiCMOS and InP HBT technologies are compared.
A high-speed input comparator and output driver with adjustable pre-emphasis for applications in serial interchip communications over backplanes at 20 Gb/s is presented. The circuit was implemented in 130-nm CMOS and consumes 140 mW from a 1.5-V supply. It has over 30 dB dynamic range with a sensitivity of 20 mVp-p and a differential output swing of 700(More)
This paper presents the status of most advanced CMOS and BiCMOS technologies able to address very high-speed optical communications and millimeter-wave applications. The performance of active and passive devices available on bulk Si and high-resistivity SOI is reviewed and HF characteristics of state-of-the-art SiGe HBTs and MOSFETs are compared. The(More)
A new technique to design highly stable operational amplifiers with maximum unity gain bandwidth, UGB, is developed. It relies on biasing MOSFETs at the peak f/sub MAX/ current density. Several opamps, based on MOS-HBT SiGe BiCMOS cascodes, were designed and fabricated with UGB as high as 37 GHz. This record bandwidth is achieved with active p-MOSFET loads.(More)
BiCMOS topologies for mm-wave voltage-controlled oscillators and frequency dividers are presented. The topologies, based on a MOS-HBT cascode configuration, enable low-voltage operation without compromising speed. A 37-GHz Colpitts VCO with 8% tuning bandwidth is reported with a phase noise of -97 dBc/Hz at a 1-MHz offset. For the first time, experimental(More)
— This paper explores the application of SiGe BiCMOS technology to mm-wave transceivers with analog and digital signal processing. A review of 10-80Gb/s SERDES performance across 3 SiGe BiCMOS and CMOS technology nodes reveals remarkable similarities with digital CMOS IC scaling and points to the benefits of a SiGe BiCMOS roadmap. Examples of 40-Gb/s(More)
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