T.M. Mayer

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  • T.M. Mayer
  • 1982 International Electron Devices Meeting
  • 1982
Plasma-assisted etching processes, although by now commonplace in the IC fabrication facility, continue to be characterized by lack of thorough understanding of processes and the effects of process parameters on performance. Reactive ion beam etching techniques, on the other hand, have been shown to be well controlled, reproducible and understandable in a(More)
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