T. M. Abdolkader

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The validity of the uncoupled mode space (UMS) approach for simulating double gate MOSFETs in the ballistic limit is examined. The mode space results are compared to the rigorous real space (RS) approach. The critical body thickness, at which the UMS results are no more accurate, is shown to be bias dependent. A computationally efficient method is developed(More)
Numerical simulation of nanoscale double gate MOSFET depends mainly on the accurate representation of quantum-mechanical effects. These effects include, mainly, the quantum confinement of carriers by gate-oxides in the direction normal to the interfaces, and the quantum transport of carriers along the channel. In a previous work, the use of transfer matrix(More)
Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium Green's function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) is reported. The transport models were implemented in the same simulator and used to simulate near-and long-term's targets of the ITRS for DG MOSFETs. The CMS presents the advantage of(More)
A software tool for the 2D simulation of double-gate SOI MOSFET is developed. The developed tool is working under MATLAB environment and is based on the numerical solution of Poisson and Schrodinger equations self-consistently to yield the potential, carrier concentrations, and current within the device. Compared to the already existing tools, the new tool(More)
In this paper, a model for electron distribution in the direction perpendicular to the interface (transverse direction) of a DG-MOSFET is proposed. The model is based on multiplying the classically-calculated electron density by a correction term to account for quantummechanical effects. The correction term is chosen to guarantee zero carrier density at the(More)
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