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The design, fabrication, and experimental characteristics of InGaAs PIN diodes are presented for InP-based W-band monolithic integrated switches. The diodes with 10 /spl mu/m-diameter were used and showed a breakdown voltage of 17 V, a turn-on voltage of 0.36 V, and a switching cutoff frequency of 6.3 THz. The monolithic integrated switches employed(More)
The DC and RF performance of a 0.1 /spl mu/m gate-length p-type modulation-doped field-effect transistor (MODFET) is reported. The hole channel consists of a compressively strained Ge layer grown on a relaxed Si/sub 0.4/Ge/sub 0.6/ buffer on a Si substrate. The combination of a high hole mobility of 1400 cm/sup 2//Vs, a high sheet carrier density of 3/spl(More)
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