A fully integrated 4-channel automotive radar transceiver chip, integrated in a 200-GHz SiGe:C production technology, is presented. With a typical transmit power of 2 x +7 dBm at the antenna ports and all functions active, the chip draws a current of about 600 mA from a single 5.5 V supply. The design permits FMCW operation in the 76 to 77 GHz band at… (More)
A monolithically integrated 160-GHz transmitter and receiver chipset with in-phase/quadrature baseband inputs and outputs and on-chip local oscillator (LO) generation has been implemented in a 0.25- μm silicon-germanium heterojunction bipolar transistor technology. The chipset features a three-stage differential power amplifier, a low-noise… (More)
An active down-conversion mixer for automotive radar applications at 76 GHz to 81 GHz was realized in a 200 GHz f/sub T/ SiGe bipolar technology. A conversion gain of more than 24 dB and a single-sideband noise figure of less than 14 dB is achieved. The 1 dB output compression point is -4 dBm. The power consumption is 300 mW at -5 V supply voltage.
We present a wideband amplifier with 12 dB gain and a 3-dB bandwidth of 15 GHz. The noise figure is 2.8 dB for frequencies up to 10 GHz and 4 dB at 15 GHz. The circuit is manufactured in an advanced SiGe bipolar technology and consumes 7.2 mA from a 3.3 V supply.
– A single ended low noise amplifier at 77 GHz has been designed, implemented, and characterized. The focus was on a low noise figure, reasonable input and output matching, and a high input compression point which are basic requirements for automotive radar applications or car–to–car communication systems. The LNA was fabricated in a 225 GHz f T SiGe:C… (More)
This paper presents four signal-generation chips that comprise a fundamental-wave voltage-controlled oscillator (VCO), an output buffer, and a divide-by-32 prescaler. The VCOs with contiguous tuning ranges cover almost the full waveguide band from 110 to 170GHz (D-band). The fastest VCO operates at up to 181GHz in combination with the prescaler. The VCOs… (More)
This paper presents circuits in SiGe bipolar technology for automotive radar applications at 77 GHz. They cover the transmit and receive path of typical radar sensors and include a voltage-controlled oscillator with integrated power amplifier and frequency divider, an active mixer and a low-noise amplifier
A broadband amplifier with 16 dB gain and a 3-dB bandwidth of more than 60 GHz is presented. This amplifier exhibits a 1-dB compression point of-9.5 dBm and a third-order intercept point of +2.1 dBm referred to the input. The maximum differential output voltage swing is 1.5 V PP. Clear output eye diagrams have been measured up to 100 Gbit/s. The chip is… (More)
Presents a dual-modulus prescaler with divide ratios of 256 and 257. The circuit uses static divider stages and differential current-mode logic. AND-gates are merged with flip-flops to achieve high operating frequencies at low power consumption. The prescaler operates with input frequencies ranging from below 1 GHz up to 36.4 GHz. It consumes 34.2 mA from a… (More)
We present a static frequency divider designed in a 225 GHz f T SiGe bipolar technology. The divider has a divide ratio of four and it is operational from 200 MHz up to 110 GHz (limited by the measurement equipment). At a-5.2 V power supply, the circuit, including the two dividers and the input and output stages, consumes less than 260 mA.