T D Boone

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We have measured the room temperature response of nanoscale semiconductor Hall crosses to local applied magnetic fields under various local electric gate conditions using scanning probe microscopy. Near-surface quantum wells of AlSb/InAs/AlSb, located just 5 nm from the heterostructure surface, allow very high sensitivity to localized electric and magnetic(More)
—We present a novel optical switching technique utilizing emission packet positioning of semiconductor heterostruc-ture. A modulation-doped p-AlGaAs–GaAs heterostructure is employed to control spontaneous emission packet positioning with electric fields. Emission packets generated by optical input signals are brought over 150 m with electric fields, so the(More)
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