T. Cosnier

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
The impact of the built-in stress of the SiN passivation layer on p-GaN gate High Electron Mobility transistors (HEMTs) is investigated through TCAD simulations. Local modifications of electron confinement in the channel area due to stressor deposition can be exploited to increase the threshold voltage independently of the ON-state resistance (up to(More)
  • 1