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376 nm ultra-violet laser diode was used for crystallization of Si thin-film on glass substrate for thin-film solar cell application. Laser beam was focused on Si film with a dimension of 1.5 × 8μm and it is scanned over Si film with velocities of among 0.3 m/s to 5.2 m/s. From scanning electron microscopy (SEM) and Raman scattering… (More)