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— In this work we have investigated the impact of quantum mechanical effects on the device performance of n-type in ultra-scaled Si x Ge 1-x nanowire transistors (NWT) for possible future applications. For the purpose of this paper Si x Ge 1-x NWTs with different Si x Ge 1-x molar fraction has been simulated. However, in all devices the cross-sectional(More)
In this work we investigate the correlation between channel strain and device performance in various n-type Si-NWTs. We establish a correlation between strain, gate length and cross-section dimension of the transistors. For the purpose of this paper we simulate Si NWTs with a <;110> channel orientation, four different ellipsoidal channel(More)
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