T. Al-Ameri

Learn More
— In this work we have investigated the impact of quantum mechanical effects on the device performance of n-type in ultra-scaled Si x Ge 1-x nanowire transistors (NWT) for possible future applications. For the purpose of this paper Si x Ge 1-x NWTs with different Si x Ge 1-x molar fraction has been simulated. However, in all devices the cross-sectional(More)
  • 1