T. A. Pomorski

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The electronic properties of thin film low-&#x03BA; interlayer dielectric (ILD) and etch stop layers (ESL) are important issues in present day ULSI development.<sup>1&#x2013;6</sup> Low-&#x03BA; ILD and ESLs with dielectric constants significantly less then those of SiO<inf>2</inf> and SiN are utilized to reduce capacitance induced RC delays in ULSI(More)
Interlayer dielectrics with low dielectric constants are needed for current and future ULSI technology nodes. [1,2] However an understanding of the defects which limit reliability and cause increased leakage currents is not yet developed for these low-k films. As reported previously [3], we have observed several performance limiting defects with electron(More)
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