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This is the first report of catalytic vapor deposition (Cat-CVD) passivated AlGaN/GaN HEMT. We have found out that the Cat-CVD passivation film with NH3 treatment greatly enhances the reliability of the AlGaN/GaN HEMT. It is rationalized, through the low frequency capacitance-voltage measurement, that the NH3 treatment in the Cat-CVD reactor before the SiN(More)
A new derivative spectrophotometric (DS) method was proposed and validated for quantification of total flavonoids from in O/W emulsion with polyacrylamide (and) C13-14 isoparaffin (and) laureth-7 containing Catuaba (Trichilia catigua Adr. Juss) (and) Marapuama (Ptychopetalum olacoides Bentham) extract. DS method was optimized to perform the assay in most(More)
A Nonlinear Circuit Model (NCM) combined with device/physical parameters was developed by using hyperbolic tangent (tanh) function and applied to GaN high electron mobility transistors (HEMTs). The equations for the NCM were constructed to reproduce the results of a device physical simulation. Model parameters are similar with the parameters used in the(More)
The two-dimensional effect in the reverse gate leakage current of GaN HEMTs is studied by using the TCAD simulation. At the high voltage region, the extension of the potential from the gate to the drain latterly is important role for the reverse gate leakage current characteristics. On the other hands, the electrons flow vertically from the gate electrode(More)
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