Szymon Bugiel

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This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in 200 nm SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionising particle (MIP) tracking in particle physics experiments. For this reason the overriding goal of the project was to(More)
A stable reference voltage (or current) source is a standard component of today's microelectronics systems. In particle physics experiments such reference is needed in spite of harsh ionizing radiation conditions, i.e. doses exceeding 100 Mrads and fluences above 1e15 n/cm2. After such radiation load a bandgap reference using standard p-n junction of(More)
The aim of this work is to develop a dedicated low power transmitter interface for high-speed data transmission in CMOS 130 nm technology. Such interface is necessary in complex ASICs working at high frequencies and processing large amounts of data, in particular it is needed in advanced detector readout systems of particle physics experiments. New(More)
This paper presents the design of the 10-bit Successive Approximation Register Analog-to-Digital Converter (SAR ADC) achieving 20 MHz sampling frequency at a power consumption of about 900 μW and 1.8 V power supply. The ADC was designed in 200 nm Silicon-On-Insulator (SOI) CMOS process. The SOI is one of the most advanced CMOS technology that allows(More)
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