Sylvie Galdin-Retailleau

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On the basis of acquired knowledge, the paper present a DC compact model designed for the conventional CNTFET (C-CNTFET) featuring a doping profile similar to n-MOSFET. The specific enhancement lies on the implementation of a physical based calculation of the minima of energy conduction subbands. This improvement allows a realistic analysis of the impact of(More)
Magnetic Tunnel Junctions (MTJs) - the basic structures of the Spin-Transfer Torque Magnetic RAMs (STT-MRAM) currently reaching the market - present a complex and probabilistic switching behavior. Although some analytical models describing this behavior exist, they can not describe all the switching regimes of the MTJs. They can model low(More)
Spin-transfer torque magnetic memory (STT-MRAM) is currently under intense academic and industrial development, since it features non-volatility, high write and read speed and high endurance. In this work, we show that when used in a non-conventional regime, it can additionally act as a stochastic memristive device, appropriate to implement a "synaptic"(More)
This paper presents the results of a comparison among five Monte Carlo device simulators for nano-scale MOSFETs. The Monte Carlo models are applied to the simulation of the I-V characteristics of a 25 nm gate-length MOSFET representative of the highperformance transistor of the 65 nm technology node. Appreciable differences between the simulators are(More)
This paper examines the quantum transport effects in carbon nanotube field-effect transistors (CNTFETs) within the Wigner’s function formalism, using a particle Monte Carlo technique. The comparison with semi-classical simulation shows that significant differences observed at the microscopic level are not necessarily strongly reflected at the macroscopic(More)
This paper reports for the first time a simulation study of thermal noise in a simple test bed structure (three nanometric Si resistors) using an atomistic model and a continuum one. The 3D Monte Carlo atomistic approach that describes the electron-impurity interaction in the presence of discrete impurities was presented in (Barraud et al., 2002). This(More)
A physical model of sequential transport through a device containing two semiconductor nanocrystals has been developed. It is based on (i) the calculation of the nanocrystal phonon modes, (ii) the self consistent calculation of the nanocrystal electronic structure including collisional broadening, (iii) the calculation of tunnelling rates and (iv) the Monte(More)
The 3D Monte Carlo simulation of an Si dot-based double-tunnel junction shows not only the possibility of shot noise suppression down to the Fano factor of 0.5, but also of super-Poissonian noise in the case of multi-state process. The counting statistics of the tunneling events provides a clear interpretation of the different noise regimes according to the(More)
A three-dimensional (3D) simulator of semiconducting nanocrystal-based single-electron transistors (SETs) is presented. It is based on the self-consistent solution of Poisson and Schrodinger equations. The resulting wave functions are used to compute the bias-dependent tunneling rates in the weak dot to leads coupling limit. These rates are used as input(More)
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