Sylvain R Laframboise

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coupling strength operating above 150 K S. G. Razavipour, E. Dupont, S. Fathololoumi, C. W. I. Chan, M. Lindskog, Z. R. Wasilewski, G. Aers, S. R. Laframboise, A. Wacker, Q. Hu, D. Ban, and H. C. Liu National Research Council, Ottawa, Ontario K1A0R6, Canada Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University(More)
pumped scheme S. G. Razavipour, E. Dupont, C. W. I. Chan, C. Xu, Z. R. Wasilewski, S. R. Laframboise, Q. Hu, and D. Ban Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave. W., Waterloo, Ontario N2L3G1, Canada National Research Council, Blg. M-50, 1200 Montreal Rd., Ottawa,(More)
A new temperature performance record of 199.5 K for terahertz quantum cascade lasers is achieved by optimizing the lasing transition oscillator strength of the resonant phonon based three-well design. The optimum oscillator strength of 0.58 was found to be larger than that of the previous record (0.41) by Kumar et al. [Appl. Phys. Lett. 94, 131105 (2009)].(More)
The external performance of quantum optoelectronic devices is governed by the spatial profiles of electrons and potentials within the active regions of these devices. For example, in quantum cascade lasers (QCLs), the electric field domain (EFD) hypothesis posits that the potential distribution might be simultaneously spatially nonuniform and temporally(More)
We report on a simple and high-yield manufacturing process for silicon planar patch-clamp chips, which allow low capacitance and series resistance from individually identified cultured neurons. Apertures are etched in a high-quality silicon nitride film on a silicon wafer; wells are opened on the backside of the wafer by wet etching and passivated by a(More)
of resonant phonon-based terahertz quantum cascade lasers S. Fathololoumi, E. Dupont, Z. R. Wasilewski, C. W. I. Chan, S. G. Razavipour, S. R. Laframboise, Shengxi Huang, Q. Hu, D. Ban, and H. C. Liu National Research Council, Ottawa, Ontario K1A0R6, Canada Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University(More)
We demonstrate InGaAs mid-infrared quantum well infrared photodetectors (MIR PV-QWIPs) that enable cost-effective mature GaAs-based detection and imaging technologies, with exceptional material uniformity, reproducibility, and yield, over a large area, with high spectral selectivity, innate polarization sensitivity, radiation hardness, high detectivity, and(More)
Results are presented for a dual-band detector that simultaneously detects UV radiation in the 250-360 nm and IR radiation in the 5-14 microm regions with near zero spectral cross talk. In this detector having separate UV- and IR-active regions with three contacts (one common contact for both regions) allows the separation of the UV and IR generated(More)
The design and fabrication of a high power THz quantum cascade laser (QCL), with electrically controllable transverse mode is presented. The switching of the beam pattern results in dynamic beam switching using a symmetric side current injection scheme. The angular-resolved L-I curves measurements, near-field and far-field patterns and angular-resolved(More)