Sylvain L. Delage

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—The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 • C, InAlN/GaN HEMTs have been operated up to 900 • C for 50 h(More)
We experimentally prove the viability of the concept of the double-heterostructure quantum well InAlN/GaN high-electron-mobility transistor (HEMT) for the device higher robustness and reliability. In the single quantum well InAlN/GaN HEMTs, the intrinsic channel resistance increases by 300% after 1 h off-state stress; much less degradation is observed in(More)
InAlN/AlN/GaN high electron mobility transistors (HEMT) show interesting performances at level of static characteristics as well as at level of the behavior at microwave frequencies. This article presents an analysis of the impact of the variation of the topology of 2×100 μm devices on static I-V measurements and small signal parameters.(More)