Svetlana Mansurova

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Temperature dependence of DC conductivity &#x03C3;DC(T) of spin-coated poly (3,4 ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) films has been studied. &#x03C3;DC(T) was measured in films deposited from mixtures of PEDOT/PSS: H<sub>2</sub>O (1:0.5), PEDOT:PSS (without dilution), PEDOT/PSS: Isopropyl Alcohol (IPA) (1:0.5) and PEDOT/PSS:IPA(More)
Indium tin oxide (ITO) thin films were deposited by magnetron sputtering with different oxygen flows rates (%O<sub>2</sub> = 1 % to 0 %). The films were deposited by RF discharge in argon/oxygen atmosphere with a RF power W = 150 W at substrate temperature T = 175&#x00B0; C and pressure P = 6 mTorrs. Photoelectric parameters of fabricated ITO films were(More)
Measurements of non-steady-state P-EMF current as a function temporal and spatial modulation frequencies were performed on intrinsic hydrogenated amorphous silicon film at 633 nm wavelength. The experimental behavior of photo-EMF current is well described by a bipolar photoconductivity model. Material photoelectric parameters such as majority carriers'(More)
Inorganic-organic hybrid solar cells with different frontal interface configurations have been studied. Spin-coated conducting polymer Poly (3,4 ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) or boron doped a-Si:H films were used as p-type layer. Intrinsic amorphous silicon (a-Si:H) films and P3HT:PCBM heterojunctions were investigated as(More)
We have studied the effect of Ge-concentration in gas phase on electronic properties of GeXSiY:H alloys deposited by RF-PECVD. The relative gas phase Ge concentration was varied from [Ge]<sub>gas</sub>= 50 % to 100 %. The electronic properties of the films were studied by the measurements of temperature dependence of dark conductivity(More)
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