Susanne Mau

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Aluminum-doped p-type (Al-p<sup>+</sup>) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) as well as Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> stacks, where(More)
Aluminum-doped p-type (Al-p<sup>+</sup>) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al<inf>2</inf>O<inf>3</inf>) as well as Al<inf>2</inf>O<inf>3</inf>/SiN<inf>x</inf> stacks, where(More)
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