Susan R. Huang

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Gallium phosphide (GaP), with its wide band gap of 2.26 eV, is a good candidate for the top junction solar cell in a multijunction solar cell system. Here, we design, fabricate, characterize, and analyze GaP solar cells. Liquid phase epitaxy is used to grow the semiconductor layers. Four generations of GaP solar cells are developed and fabricated with each(More)
The growth of thin layers of III–V semiconductors on a silicon platform for multijunction solar cell applications has the benefits of reduced materials cost and standing on the well-developed silicon integrated circuit and solar cell technology. A prime candidate for developing such a platform is gallium phosphide (GaP) because it has a 0.37% lattice(More)
Heteroepitaxy SiGe on Si by liquid phase epitaxy (LPE) is a potential material for photovoltaic application. The Si0.05Ge0.95 solar cell with an energy gap of 0.72 eV can lead to a 7 percentage point increase in the Si-based multi-bandgap system or any multi-bandgap system that contains Si as the 1.1 eV solar cell. In this initial work we report first(More)
High efficiency multijunction solar cells are usually grown on expensive III-V or germanium semiconductor substrates. Growing thin layers of III-V semiconductors on a low cost silicon substrate can reduce the cost. The low lattice constant mismatch between gallium phosphide (GaP) and Si (0.37%) is favorable for epitaxial growth. In this paper, we will(More)
Gallium Phosphide (GaP) solar cells have been designed, fabricated, characterized and analyzed as candidates for the top junction solar cell in a multi-junction solar cell system. Liquid phase epitaxy (LPE) has been used as the growth method for the epitaxial layers. Open circuit voltage (Voc) of 1.535V has been achieved under one sun illumination from the(More)
The development of a cost-effective Si based platform on which III-V's can be grown is of great interest. This work investigates the morphology of gallium phosphide (GaP) films grown on {111} silicon (Si) substrates by means of liquid phase epitaxy in a tin (Sn) - based solvent bath. Two types of single-crystal {111} Si substrates were used; the first type(More)
Gallium Phosphide (GaP) is a good candidate for a high band gap solar cell in a multi-junction solar cell system due to its proper band gap (2.26ev), well developed technology [1–2], and high carrier mobility [3] . High energy gap solar cell plays a very important role in multi-junction systems. In this paper, theoretical simulation work has been(More)
Good surface passivation is necessary to achieve high efficiencies in silicon solar cells. One method is to epitaxially grow wide bandgap semiconductor materials on the silicon to act as a window layer that provides surface passivation and a minority carrier reflector. GaP and Si have a low lattice mismatch of 0.37% which is favorable for epitaxial growth(More)
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