Susan C. Palmateer

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■ For the last two decades photolithography has been the principal technology for patterning the progressively smaller and denser features required in microelectronic devices and circuits. In recent years, the increasing sophistication of photolithographic techniques using radiation at wavelengths comparable to the feature size has enabled the mass(More)
The trend in microelectronics toward printing features 0.25 fitn and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm requires parallel progress in(More)
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