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Journals and Conferences
The SiC based high power 3 phase inverter module with double side cooling structure was developed. By applying flipchip bonding of SiC based high power DMOSFET device on DBC substrate, the source and… (More)
In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also… (More)