Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors
- A. Acharyya, Jayabrata Goswami, Suranjana Banerjee, J. Banerjee
- Physics
- 1 March 2015
The authors have developed a quantum corrected drift-diffusion model for impact avalanche transit time (IMPATT) devices by coupling the density gradient model with the classical drift-diffusion…
Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime
- A. Acharyya, Jit Chakraborty, J. Banerjee
- Physics
- 1 October 2013
The authors have carried out the large-signal characterization of silicon-based double-drift region (DDR) impact avalanche transit time (IMPATT) devices designed to operate up to 0.5 THz using a…
Influence of skin effect on the series resistance of millimeter-wave IMPATT devices
- A. Acharyya, Suranjana Banerjee, J. Banerjee
- Physics
- 1 September 2013
An attempt is made in this paper to study the influence of skin depth on the parasitic series resistance of millimeter-wave IMPATT devices based on Silicon. The method is based on the concept of…
Quantum drift-diffusion model for IMPATT devices
- A. Acharyya, S. Chatterjee, Jayabrata Goswami, Suranjana Banerjee, J. Banerjee
- Physics
- 1 September 2014
Quantum correction is necessary on the classical drift-diffusion (CLDD) model to predict the accurate behavior of high frequency performance of ATT devices at frequencies greater than 200 GHz when…
A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots
- A. Acharyya, Suranjana Banerjee, J. Banerjee
- PhysicsInternational journal of microwave and wireless…
- 23 January 2013
A large-signal model and a simulation technique based on non-sinusoidal voltage excitation are used to obtain the electric field snapshots from which the series resistance and related high-frequency…
Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device
- A. Acharyya, Suranjana Banerjee, J. Banerjee
- Physics
- 1 February 2013
The authors have developed a large-signal simulation technique extending an in-house small-signal simulation code for analyzing a 94 GHz double-drift region impact avalanche transit time device based…
Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect
- A. Acharyya, Suranjana Banerjee, J. Banerjee
- Physics, Engineering
- 1 December 2012
In this paper large-signal modeling and simulation has been carried to study the frequency chirping due to temperature transients and the large-signal power and efficiency of pulsed silicon…
Diamond Based DDR IMPATTs: Prospects and Potentiality as Millimeter-Wave Source at 94 GHz Atmospheric Window
- R. Sanyal, A. Acharyya, K. Datta
- Physics
- 1 June 2013
Large-signal simulation is carried out in this paper to investigate the prospects and potentiality of Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device based on semiconducting…
Heterojunction DDR THz IMPATT diodes based on AlxGa1−xN/GaN material system
- Suranjana Banerjee, M. Mitra
- Chemistry
- 25 January 2015
Simulation studies are made on the large-signal RF performance and avalanche noise properties of heterojunction double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on…
Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices
- A. Acharyya, Suranjana Banerjee, J. Banerjee
- Physics
- 1 March 2014
An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region (DDR) impact avalanche transit time (IMPATT) devices…
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