Supriyo Datta

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—Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to Natori's theory of the ballistic MOSFET. The model also(More)
A simple model for ballistic nanotransistors, which extends previous work by treating both the charge control and the quantum capacitance limits of MOSFET-like transistors, is presented. We apply this new model to MOSFET-like carbon nanotube FETs (CNTFETs) and to MOSFETs at the scaling limit. The device physics for operation at ballistic and quantum(More)
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube electronics. We focus in this paper on one element of that(More)
Carbon nanotube metal–insulator–semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal–oxide–semiconductor capacitors, the calculated C – V(More)
The performance limits of carbon nanotube field-effect transistors ͑CNTFETs͒ are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide– semiconductor field-effect transistors ͑MOSFETs͒. Compared to ballistic MOSFETs, ballistic CNTFETs show similar I – V characteristics but the channel conductance is quantized. For(More)
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an intrinsic carbon nanotube channel. Ambipolar conduction is found to be an important factor that must be(More)
—We use the nonequilibrium Green function method in the ballistic limit to provide a quantitative description of the con-ductance of graphene p-n junctions—an important building block for graphene electronics devices. In this paper, recent experiments on graphene junctions are explained by a ballistic transport model, but only if the finite junction(More)
S The electrostatics of nanowire transistors are studied by solving the Poisson equation self-consistently with the equilibrium carrier statistics of the nanowire. For a one-dimensional, intrinsic nanowire channel, charge transfer from the metal contacts is important. We examine how the charge transfer depends on the insulator and the metal/semiconductor(More)
We point out that single electron charging effects such as Coulomb Blockade (CB) and high-bias staircases play a crucial role in transport through single ultrashort molecules. A treatment of Coulomb Blockade through a prototypical molecule, benzene, is developed using a master-equation in its complete many-electron Fock space, evaluated through exact(More)
Atomistic non-equilibrium Green's function simulations of Graphene nano-ribbons in the quantum hall regime" (2008). Abstract The quantum Hall effect in Graphene nano-ribbons (GNR) is investigated with the non-equilibrium Green's function (NEGF) based quantum transport model in the ballistic regime. The nearest neighbor tight-binding model based on p z(More)