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A simple model for ballistic nanotransistors, which extends previous work by treating both the charge control and the quantum capacitance limits of MOSFET-like transistors, is presented. We apply this new model to MOSFET-like carbon nanotube FETs (CNTFETs) and to MOSFETs at the scaling limit. The device physics for operation at ballistic and quantum(More)
Performance limits of silicon MOSFETs are examined by a simple analytical theory augmented by self-consistent Schrödinger-Poisson simulations. The on-current, transconductance, and drain-to-source resistance in the ballistic limit (which corresponds to the channel length approaching zero) are examined. The ballistic transconductance in the limit that the(More)
Carbon nanotube metal–insulator–semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal–oxide–semiconductor capacitors, the calculated C – V(More)
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube electronics. We focus in this paper on one element of that(More)
– A simple, physical view of carrier transport in nanoscale MOSFETs is p r e s e n t e d. The role of ballistic transport, scattering and o f f-equilibrium transport, and quantum transport are illustrated by numerical simulation, and t h e limitations of common approaches used for d e v i c e TCAD are examined. I. INTRODUCTION Recent work shows that MOSFETs(More)
We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the(More)
2 Resistance of a Molecule 1 Introduction In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes [1, 2] as well as self-assembled(More)
The performance limits of carbon nanotube field-effect transistors ͑CNTFETs͒ are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide– semiconductor field-effect transistors ͑MOSFETs͒. Compared to ballistic MOSFETs, ballistic CNTFETs show similar I – V characteristics but the channel conductance is quantized. For(More)