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Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube electronics. We focus in this paper on one element of that(More)
The possible use of spin rather than charge as a state variable in devices for processing and storing information has been widely discussed, because it could allow low-power operation and might also have applications in quantum computing. However, spin-based experiments and proposals for logic applications typically use spin only as an internal variable,(More)
– A simple, physical view of carrier transport in nanoscale MOSFETs is p r e s e n t e d. The role of ballistic transport, scattering and o f f-equilibrium transport, and quantum transport are illustrated by numerical simulation, and t h e limitations of common approaches used for d e v i c e TCAD are examined. I. INTRODUCTION Recent work shows that MOSFETs(More)
It is well-known that conventional field effect transistors (FETs) require a change in the channel potential of at least 60 mV at 300 K to effect a change in the current by a factor of 10, and this minimum subthreshold slope S puts a fundamental lower limit on the operating voltage and hence the power dissipation in standard FET-based switches. Here, we(More)
A simple model for ballistic nanotransistors, which extends previous work by treating both the charge control and the quantum capacitance limits of MOSFET-like transistors, is presented. We apply this new model to MOSFET-like carbon nanotube FETs (CNTFETs) and to MOSFETs at the scaling limit. The device physics for operation at ballistic and quantum(More)
Performance limits of silicon MOSFETs are examined by a simple analytical theory augmented by self-consistent Schrödinger-Poisson simulations. The on-current, transconductance, and drain-to-source resistance in the ballistic limit (which corresponds to the channel length approaching zero) are examined. The ballistic transconductance in the limit that the(More)
Carbon nanotube metal–insulator–semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal–oxide–semiconductor capacitors, the calculated C – V(More)
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an intrinsic carbon nanotube channel. Ambipolar conduction is found to be an important factor that must be(More)