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A simple model for ballistic nanotransistors, which extends previous work by treating both the charge control and the quantum capacitance limits of MOSFET-like transistors, is presented. We apply this new model to MOSFET-like carbon nanotube FETs (CNTFETs) and to MOSFETs at the scaling limit. The device physics for operation at ballistic and quantum(More)
Carbon nanotube metal–insulator–semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal–oxide–semiconductor capacitors, the calculated C – V(More)
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube electronics. We focus in this paper on one element of that(More)
– A simple, physical view of carrier transport in nanoscale MOSFETs is p r e s e n t e d. The role of ballistic transport, scattering and o f f-equilibrium transport, and quantum transport are illustrated by numerical simulation, and t h e limitations of common approaches used for d e v i c e TCAD are examined. I. INTRODUCTION Recent work shows that MOSFETs(More)
2 Resistance of a Molecule 1 Introduction In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes [1, 2] as well as self-assembled(More)
The performance limits of carbon nanotube field-effect transistors ͑CNTFETs͒ are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide– semiconductor field-effect transistors ͑MOSFETs͒. Compared to ballistic MOSFETs, ballistic CNTFETs show similar I – V characteristics but the channel conductance is quantized. For(More)
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an intrinsic carbon nanotube channel. Ambipolar conduction is found to be an important factor that must be(More)
S The electrostatics of nanowire transistors are studied by solving the Poisson equation self-consistently with the equilibrium carrier statistics of the nanowire. For a one-dimensional, intrinsic nanowire channel, charge transfer from the metal contacts is important. We examine how the charge transfer depends on the insulator and the metal/semiconductor(More)