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Previous studies have applied various methodologies to analyze patent data for technology management, given the advances in data analysis techniques available. In particular, efforts have recently been made to use text-mining (i.e. extracting keywords from patent documents) for patent analysis purposes. The results of these studies may be affected by the(More)
—We present a vertical-silicon-nanowire-based p-type tunneling field-effect transistor (TFET) using CMOS-compatible process flow. Following our recently reported n-TFET [11], a low-temperature dopant segregation technique was employed on the source side to achieve steep dopant gradient, leading to excellent tunneling performance. The fabricated p-TFET(More)
—This letter presents a Si nanowire based tunneling field-effect transistor (TFET) using a CMOS-compatible vertical gate-all-around structure. By minimizing the thermal budget with low-temperature dopant-segregated silicidation for the source-side dopant activation, excellent TFET characteristics were obtained. We have demonstrated for the first time the(More)