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  • Keun Hwi Cho, Sung Dae Suk, +6 authors Byung-il Ryu
  • Physics
  • International Electron Devices Meeting
  • 2006 (First Publication: 1 December 2006)
  • the authors report transport experiments on gate-all-around (GAA) TSNWFETs fabricated by top-down CMOS processes. The nanowire with 45 nm gate length exhibits single electron tunneling, and the totalContinue Reading
  • Seong-Jun Jeong, Hyo Won Kim, +9 authors Seongjun Park
  • Materials Science
  • 2016 (First Publication: 16 September 2016)
  • Among the most fundamental challenges encountered in the successful incorporation of graphene in silicon-based electronics is the conformal growth of ultrathin dielectric films, especially those withContinue Reading