Sung-Jae Maeng

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/sup G/aAs power MESFET's with 0.5-/spl mu/m T-shaped gate for Ku-band power applications have been developed using a new self-aligned and optical lithography. It displays a maximum current density of 350 mA/mm, an uniform transconductance of 150 mS/mm and a high gate-to-drain breakdown voltage of 35 V. Both the high breakdown voltage and the uniform(More)
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