Sung Hyun Jo

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A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal-oxide semiconductor neurons and memristor synapses can support important synaptic functions such(More)
We demonstrate large-scale (1 kb) high-density crossbar arrays using a Si-based memristive system. A two-terminal hysteretic resistive switch (memristive device) is formed at each crosspoint of the array and can be addressed with high yield and ON/OFF ratio. The crossbar array can be implemented as either a resistive random-access-memory (RRAM) or a(More)
We report the integration of 3D-stackable 1S1R passive crossbar RRAM arrays utilizing a Field Assisted Superlinear Threshold (FAST) selector. The sneak path issue in crossbar memory integration has been solved using the highest reported selectivity of 10<sup>10</sup>. Excellent selector performance is presented such as extremely sharp switching slope of(More)
We show that in nanoscale two-terminal resistive switches the resistance switching can be dominated by the formation of a single conductive filament. The probabilistic filament formation process strongly affects the device operation principle, and can be programmed to facilitate new functionalities such as multibit switching with partially formed filaments.(More)
We report studies on nanoscale Si-based memristive devices for memory and neuromorphic applications. The devices are based on ion motion inside an insulating a-Si matrix. Digital devices show excellent performance metrics including scalability, speed, ON/OFF ratio, endurance and retention. High density non-volatile memory arrays based on a crossbar(More)
We report studies on a nanoscale resistance switching memory structure based on planar silicon that is fully compatible with CMOS technology in terms of both materials and processing techniques employed. These two-terminal resistance switching devices show excellent scaling potential well beyond 10 Gb/cm2 and exhibit high yield (99%), fast programming speed(More)
We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a field-assisted superlinear threshold selector. The selector offers high selectivity of &gt;10<sup>7</sup>, sharp switching slope of &lt;;5 mV/decade, ability to tune(More)
In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the(More)
The suppression of sneak paths in a cross-point RRAM array, one of the most challenging tasks in high density RRAM integration, has been successfully demonstrated by utilizing a Field Assisted Superlinear Threshold (FAST) selector (1, 2). The FAST selector provides a volatile switching behavior at the critical electric field. Excellent selector performance(More)