Sung Hun Jin

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When scaling down to the channel length (L/sub c/) of 1.8 /spl mu/m using a membrane shadow mask, top-contact pentacene thin-film transistors (TFTs) show that grain size dependency on the anomalous leakage current becomes conspicuous as L/sub c/ is comparable to the grain size. For scaled-down OTFTs with large and small grain, the obvious difference of(More)
A novel process utilizing electrical stress is proposed for the formation of Co silicide on single crystal silicon (c-Si) FEAs to improve the field emission characteristics. Co silicide FEAs formed by electrical stress (ES) exhibited a significant improvement in turn-on voltage and emission current compared with c-Si FEAs. The improvement mainly comes from(More)
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