Sung-Ching Chi

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FINFET devices have demonstrated convincing low leaky I<sub>off</sub> current for the last decade and continue to take the leading role approaching to 10nm channel length. The imperative must for the next generation MOSFET transistors with 3-dimensional fin structure overwhelmingly replace the traditional MOSFET ones. However, the threshold voltages (Vt),(More)
0960-0779/$ see front matter 2011 Elsevier Ltd doi:10.1016/j.chaos.2011.10.009 ⇑ Corresponding author. Tel.: +886 3 422 7151 65 2044. E-mail address: chencc@earth.ncu.edu.tw (C.-c. C We propose a generic negative correlation between power-law scaling and Hurst exponents for size/magnitude data from real and synthetic earthquakes. The synthetic earthquakes(More)
FINFET devices have generated an alternative convincing next-generation foundation in IC industry. The outrageously leaky I<sub>off</sub> current gets controlled as the channel length is imperatively shortened down to 40nm and below. Somehow, the 3-dimensional fin structure makes itself distinct from the traditional MOSFET transistors, e.g., the threshold(More)
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