Sung-Ching Chi

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
FINFET devices have demonstrated convincing low leaky I<sub>off</sub> current for the last decade and continue to take the leading role approaching to 10nm channel length. The imperative must for the next generation MOSFET transistors with 3-dimensional fin structure overwhelmingly replace the traditional MOSFET ones. However, the threshold voltages (Vt),(More)
FINFET devices have generated an alternative convincing next-generation foundation in IC industry. The outrageously leaky I<sub>off</sub> current gets controlled as the channel length is imperatively shortened down to 40nm and below. Somehow, the 3-dimensional fin structure makes itself distinct from the traditional MOSFET transistors, e.g., the threshold(More)
We propose a generic negative correlation between power-law scaling and Hurst exponents for size/magnitude data from real and synthetic earthquakes. The synthetic earthquakes were produced from a conceptual earthquake model, the long-range connective sandpile (LRCS) model. The LRCS model is a new modification of sandpile models that considers the random(More)
  • 1