Sumathi Jyothi Medisetty

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In this paper, we present the enhanced performances of a compound Junctionless Double Gate MOSFET (JL DG-MOSFETs) using Indium Gallium Arsenide (InGaAs) as compound material and Aluminum Oxide (Al<sub>2</sub>O<sub>3</sub>) as oxide layer and compared with Silicon JL DG-MOSFET using SiO<sub>2</sub> as an oxide layer. The proposed(More)
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