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The electrical and optical properties of the Mott insulator Sr2VO4 are investigated under high pressure on a phase pure polycrystalline sample. The system undergoes a pressure-driven insulator to metal transition (IMT) with a crossover between 20 and 24 GPa. The effect of pressure on the thermally driven electronic changes resulting from spin-orbital(More)
High-frequency deflection (HFD) technique with a delayed coincidence single photon counting arrangement is an efficient technique for radiative lifetime measurement. An apparatus for measurement of the radiative lifetime of atoms and molecules has been developed in our laboratory and measurements have been performed with great success in a large number of(More)
The structural and vibrational properties of the spin-gapped system Cu(2)PO(4)(OH) have been investigated at room temperature under high pressure up to ~20 GPa by Raman scattering and synchrotron-based x-ray diffraction and infrared (IR) spectroscopic measurements. The orthorhombic phase (space group Pnnm, z = 4) remains stable up to at least 7 GPa where it(More)
We study the physical features of a class of exact solutions for cold compact anisotropic stars. The effect of pressure anisotropy on the maximum mass and surface redshift is analysed in the Vaidya-Tikekar model. It is shown that maximum compactness, redshift and mass increase in the presence of anisotropic pressures; numerical values are generated which(More)
Optimally doped iron-chalcogenide superconductor Fe1.03Se0.5Te0.5 has been investigated under high pressures using synchrotron-based x-ray diffraction and mid-infrared reflectance measurements at room temperature. The superconducting transition temperature (Tc) of the same sample has been determined by temperature-dependent resistance measurements up to 10(More)
We report the high-pressure vibrational properties and a pressure-induced electronic topological transition in the wide bandgap semiconductor Sb2S3 (E g  =  1.7-1.8 eV) using Raman spectroscopy, resistivity and x-ray diffraction (XRD) studies. In this report, high-pressure Raman spectroscopy and resistivity studies of Sb2S3 have been carried out to 22 GPa(More)
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