Sudheer K. Mohammed

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Atomic layer deposition of uniform thin hafnium oxide films has been demonstrated directly on H-terminated silicon surfaces using anhydrous hafnium nitrate (Hf(NO 3) 4) precursor and H 2 O vapor. Atomic layer deposition was initiated on hydrogen terminated silicon surfaces and occurred at substrate temperatures as low as 160°C. X-ray diffraction analysis(More)
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