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- Kulashree Joshi, Subhadeep Mukhopadhyay, Nilesh Goel, Nirmal Nanware, Souvik Mahapatra
- IEEE Transactions on Electron Devices
- 2014

Process impact of negative bias temperature instability (NBTI) is studied in silicon oxynitride (SiON) and high- k metal gate (HKMG) p-MOSFETs. An analytical compact model is used to predict longâ€¦ (More)

- Subhadeep Mukhopadhyay, Souvik Mahapatra
- IEEE Transactions on Electron Devices
- 2015

A gated-diode or direct current IV method is used to characterize trap generation (TG) under negative-bias temperature instability (NBTI) and positive-bias temperature instability (PBTI) stress inâ€¦ (More)

- Narendra Parihar, Uma Sharma, +4 authors Souvik Mahapatra
- 2017 IEEE International Reliability Physicsâ€¦
- 2017

Negative Bias Temperature Instability (NBTI) is due to interface trap generation (Î”N<inf>it</inf>) and trapping of holes in gate insulator traps (Î”N<inf>It</inf>). However, the isolation methods andâ€¦ (More)

- Souvik Mahapatra, Sandip De, Kulashree Joshi, Subhadeep Mukhopadhyay, Rajan Kumar Pandey, K. R. Murali
- IEEE Electron Device Letters
- 2013

The impact of the gate insulator process on interlayer (IL) hole traps in IL/high-K dual-layer p-MOSFET gate-stack is studied by physical and electrical measurements along with atomistic simulations.â€¦ (More)

- Narendra Parihar, Nilesh Goel, Subhadeep Mukhopadhyay, Souvik Mahapatra
- IEEE Transactions on Electron Devices
- 2018

A comprehensive modeling framework is presented to predict the time kinetics of negative bias temperature instability stress and recovery during and after dc and ac stresses and also during mixedâ€¦ (More)

- Subhadeep Mukhopadhyay, Nilesh Goel, Souvik Mahapatra
- IEEE Transactions on Electron Devices
- 2016

Degradation in planar high-k metal gate pand n-channel MOSFETs, respectively, under negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) stress is studiedâ€¦ (More)

- Subhadeep Mukhopadhyay, Narendra Parihar, Nilesh Goel, Souvik Mahapatra
- IEEE Transactions on Electron Devices
- 2017

A physics-based modeling framework is proposed to calculate the threshold voltage shift (<inline-formula> <tex-math notation="LaTeX">$\Delta \text{V}_{\mathrm {T}})$ </tex-math></inline-formula> inâ€¦ (More)

- Subhadeep Mukhopadhyay, Anil K. Ghosh
- Computational Statistics & Data Analysis
- 2011

In kernel discriminant analysis, it is common practice to select the smoothing parameter (bandwidth) based on the training data and use it for classifying all unlabeled observations. But this methodâ€¦ (More)

- Chandan Joishi, Shraddha Kothari, Sayantan Ghosh, Subhadeep Mukhopadhyay, Souvik Mahapatra, Saurabh Lodha
- 2017 IEEE International Reliability Physicsâ€¦
- 2017

This work for the first time reports positive bias temperature instability (PBTI) on Ge n-channel metal oxide semiconductor field effect transistors (nFETs) with a stable and ultrathin (5 Ã…) Al2O3â€¦ (More)

- Subhadeep Mukhopadhyay, Yung-Huei Lee, Jen-Hao Lee
- Microelectronics Reliability
- 2018