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  • Narendra Parihar, Nilesh Goel, Subhadeep Mukhopadhyay, Souvik Mahapatra
  • Physics
  • IEEE Transactions on Electron Devices
  • 2018 (First Publication: 1 February 2018)
  • A comprehensive modeling framework is presented to predict the time kinetics of negative bias temperature instability stress and recovery during and after dc and ac stresses and also during mixedExpand
  • N. Parihar, U. Sharma, +4 authors S. Mahapatra
  • Engineering
  • IEEE International Reliability Physics Symposium…
  • 2017 (First Publication: 1 April 2017)
  • Negative Bias Temperature Instability (NBTI) is due to interface trap generation (ΔN<inf>it</inf>) and trapping of holes in gate insulator traps (ΔN<inf>It</inf>). However, the isolation methods andExpand
  • Chandan Joishi, Sayantan Ghosh, +4 authors Saurabh Lodha
  • Physics
  • IEEE Transactions on Electron Devices
  • 2018 (First Publication: 24 August 2018)
  • We report positive bias temperature instability data in replacement metal gate Ge n-channel metal–oxide–semiconductor field-effect transistors with an <italic>in-situ</italic> gate stack employing anExpand