Steven Taiyu Lin

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— Northrop Grumman Aerospace Systems (NGAS) has been developing InP-based heterojunction bipolar transistor technology for next generation high performance aerospace, defense and commercial applications. We present highlights and status of our production and advanced InP HBT technologies including ultra-high speed 0.25 micron emitter InP HBT.
Morgagni-type diaphragmatic hernias are rare. The overwhelming majority are discovered in children who usually present with pneumonia or sepsis. We report an unusual case of a 57-yr-old woman with a Morgagni hernia presenting with pulmonary symptoms. Complicating the clinical picture, the pneumonia delayed the definitive diagnosis until a lateral chest(More)
Original cohort members of the Framingham Study were studied to determine prognosis associated with unexplained (gradual-onset) Q wave patterns detected on routine electrocardiograms (ECGs). Biennial ECGs were obtained on subjects beginning in 1948. The index ECG was read independently and then serially in relation to all previous tracings for evidence of(More)
—Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25 m 530 GHz /600 GHz+ max InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6 GHz [1]. The divide-by-two core flip-flop dissipates 228 mW. Techniques used for the divider design optimization and(More)
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