Foundation of rf CMOS and SiGe BiCMOS technologies This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal… (More)
Electrostatic Discharge (ESD) phenomenon will play a critical role in the introduction, manufacturing and implementation of present day semiconductor devices and future nano-structures . In the future, the ability to produce nanostructures may be limited by the ESD sensitivity of these electronic and mechanical elements. The ESD Technology Roadmap will… (More)
Latchup! In this chapter, a brief overview of latchup is provided. We will provide a first quick look on what latchup is. As a starting point, this discussion will be followed by a summary of evolution, history, key innovations and patents. This chapter discusses the key innovations, contributions and patents associated with the process of understanding how… (More)
In the field of electricity, electrostatics, and circuit theory, there are many discoveries and accomplishments that have lead to the foundation of the field of electrostatic discharge (ESD) phenomenon. Below is a chronological list of key events that moved the field of electrostatics forward: 600 B.C. Thales of Miletus discovers electrostatic attraction.