Steven H. Voldman

Learn More
Foundation of rf CMOS and SiGe BiCMOS technologies This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal(More)
Electrostatic Discharge (ESD) phenomenon will play a critical role in the introduction, manufacturing and implementation of present day semiconductor devices and future nano-structures [1]. In the future, the ability to produce nanostructures may be limited by the ESD sensitivity of these electronic and mechanical elements. The ESD Technology Roadmap will(More)
Latchup! In this chapter, a brief overview of latchup is provided. We will provide a first quick look on what latchup is. As a starting point, this discussion will be followed by a summary of evolution, history, key innovations and patents. This chapter discusses the key innovations, contributions and patents associated with the process of understanding how(More)