Steve Wang

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SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ~1 eV and a direct bandgap of ~1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without(More)
In this paper we report the growth of high quality SnS thin films with good crystallinity deposited on two-dimensional (2D) mica substrates. It is believed that the 2D nature of SnS, with strong intra-layer covalent bonds and weak inter-layer van der Waals interactions, is responsible for its relative insensitivity to lattice mismatch. We also investigated(More)
X-ray microscopy offers a unique combination of large penetration depth, high resolution, and high sensitivity to elemental composition. When combined with computed tomography (CT) techniques, the full three-dimensional structure of a sample can be obtained non-destructively and often with little sample preparation. With Xradia's high-resolution x-ray(More)
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