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Journals and Conferences
Germanium based photonic devices can play a significant role in several applications, particularly in the so-called fingerprint wavelength region. Here, we review our recent results on mid-infrared germanium photonic devices that show promising performance in the 2–7.5 μm wavelength range.
In this study conducted numerical experiments aimed to determine the physical shielding factors (PSF) for two different MOSFET structures. The purpose of this paper was to present the new possibilities of the Monte Carlo numerical simulations for interaction of gamma irradiation of <sup>60</sup>Co and <sup>137</sup>Cs with semiconductor devices that are… (More)
We present the first waveguide electro-absorption modulator in germanium-on-silicon material platform at 3.8 μm wavelength, based on free-carrier injection into a straight waveguide. The fabricated 1 mm long device has modulation depth of >35 dB at 7 V.