Stephen Sarkozy

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In this paper, progress toward developing solid-state power-amplifier modules at 0.65 THz is reported. This work is enabled by a &gt;;1 THz f<sub>MAX</sub> InP HEMT transistor with a 30-nm gate and an integrated circuit process specifically tailored for circuits operating at frequencies approaching 1 THz. The building block of the reported amplifier modules(More)
In this paper, a 210 GHz solid-state power amplifier (SSPA) module is presented. The amplifier MMIC uses sub-50 nm InP HEMT transistors, coplanar waveguide (CPW) technology, and on-chip electromagnetic transitions to waveguide. Two levels of power combining were used on-chip to achieve total transistor output periphery of 0.96 mm. The first level is a 1:4(More)
In this paper, we demonstrate that the cascode amplifier topology can be extended to operating frequencies &#62; 500 GHz. Two packaged cascode amplifiers are reported, including a broadband 3 stage amplifier with &#126;17 dB gain and 8.3 dB packaged noise figure at 300 GHz and a narrowband amplifier with 10 dB gain at 0.55 THz measured in package. Both of(More)
In this paper, we describe the design, simulation, and on-wafer measurements of Submillimeter-wave Monolithic Integrated Circuit (S-MMIC) amplifiers having gain in the 400500 GHz range. A single-stage amplifier and two three-stage amplifiers with similar topology are presented, and have been fabricated in Northrop Grumman Corporation’s (NGC) 35-nm InP high(More)
We present two low-noise amplifiers for the frequency range of 160 to 270 GHz. The amplifiers were fabricated using a 35-nm InP HEMT technology and designed for room temperature and cryogenic operation. A four-stage amplifier in a common-source topology and a three-stage amplifier utilizing a cascode stage at the output achieve 15 to 25-dB on-wafer measured(More)
High electron mobility transistors with InAs channels and sub 0.1m metal gates, have demonstrated a 100% improvement in low-power, high-speed figure of merits over conventional InAlAs/InGaAs lattice-matched HEMTs and MHEMTs. AlSb/InAs MHEMTs exhibit transconductances as high as 1.3 S/mm at drain biases as low as 0.3 V, while maintaining fT and fmax results(More)
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability(More)
The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The critical parameter, Tdrain, in the Pospieszalski noise model is determined as a function of drain current by measurements of the 1-GHz noise of discrete transistors with 50- &#x03A9; generator impedance. The dc I-V for the transistors under test are presented and(More)
In this paper, we demonstrate non-destructive cryogenic probing of monolithic microwave integrated circuit (MMIC) amplifiers at W-band and discuss the implications for the development of large-format focal plane arrays for radio astronomy. Using a purpose-built cryogenic probe station to measure S-parameters and noise temperature of MMIC low-noise(More)