Stephen L Eltinge

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We report on electronic transport measurements of dual-gated nanodevices of the low-carrier density topological insulator (TI) Bi_{1.5}Sb_{0.5}Te_{1.7}Se_{1.3}. In all devices, the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through(More)
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