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—In this paper, we present integrated circuit solutions that enable high-speed data transmission over legacy systems such as short reach optics and electrical backplanes. These circuits compensate for the most critical signal impairments, intersymbol interference and crosstalk. The finite impulse response (FIR) filter is the cornerstone of our architecture,… (More)
This is dedicated to my family and everyone else who helped me along my way just so they could see me succeed. This is also dedicated to the innocent students and faculty who lost their lives at Virginia Tech on April 16, 2007 doing what I am doing now: pursuing a higher education. iv ACKNOWLEDGEMENTS I would like to thank Dr. Ali Adibi for being my… (More)
We report the direct measurement of the intrinsic photocurrent response of both top and back illuminated planar metal–semiconductor–metal structures. We directly observe the temporal dynamics of the hole transport dependence on applied bias and the initial spatial distribution using a near infrared tunable femtosecond light source and electrically biased… (More)
Penalties from in-band crosstalk for 112 Gb/s PolMux-QPSK systems are shown to be readily determined by use of a spectrally weighted crosstalk. Experimental results demonstrate that the method is robust for linear and nonlinear regimes.
We report the first statistical evaluation of the calculated effective modal bandwidth and 10Gb/s ISI penalty of graded-index perfluorinated plastic optical fiber under VCSEL illumination, utilizing high temporal-resolution differential modal delay measurements.
Tech. He received his BEE degree in Electrical Engineering with highest honors from the Georgia Institute of Technology in 1980 and his Ph.D. in Electrical Engineering from Cornell University in 1988 for his work on highly nonequilibrium carrier transport in semiconductor devices. He is currently the director of the Georgia Electronic Design Center, a… (More)
We report dramatic differences in the impulse response and wavelength dependence of back versus top illimhated Ino.53Gao.47As planar metal-semiconductor-metal devices. Via direct measurement of transit-time limited devices we identify the mechanisms involved and thereby allow the optimum CEeSign of multi-@bit, high responsivity back-illuminated devices. We… (More)