Stephane Koffel

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For an assessment of the stresses occurring during ball bonding of high-voltage CMOS chips in a structure comprising a thin and a thick silicon dioxide layer below the bonding pad, a dynamic model of the process was set up and the materials parameters were calibrated. For a realistic result of the deformation of the bonding ball during the ultrasonic stage,(More)
A ball bonding process was simulated over a high-voltage isolation structure. The removal of an inter-dielectric metal crack-stop layer was investigated through 3D simulation. Material properties for the bonded gold ball were obtained using nanoindentation and atomic force microscopy with a methodology from the work of Ma et al. This yielded both elastic(More)
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