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Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.
The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N2… Continue Reading
precursors. All Ge and GeSn layers exhibit high crystalline quality as revealed by X-ray reciprocal space mapping and are nearlyfully strain relaxed.© 2013 The Electrochemical Society. [DOI:… Continue Reading
This paper presents a novel SiGe/Si tunneling field-effect transistor (TFET) which exploits line tunneling parallel with the gate electric field. The device makes use of selective and self-adjusted… Continue Reading
Abstract In this contribution, we propose a laser concept based on a double heterostructure consisting of tensile strained Ge as the active medium and SiGeSn ternaries as cladding layers. Electronic… Continue Reading
Abstract This paper reports on the growth and characterization of highly compressive strained GeSn layers on thin strain relaxed Ge virtual substrates on Si wafers. Sn concentration up to 12.5%,… Continue Reading
The formation of new ternary NiGeSn and quaternary NiSiGeSn alloys has been investigated to fabricate metallic contacts on high Sn content, potentially direct bandgap group IV semiconductors.… Continue Reading
GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor deposition and properties… Continue Reading
Coherent interconnection of quantum bits remains an ongoing challenge in quantum information technology. Envisioned hardware to achieve this goal is based on semiconductor nanowire (NW) circuits,… Continue Reading
III-V compound semiconductors are indispensable materials for today's high-end electronic and optoelectronic devices and are being explored for next-generation transistor logic and quantum… Continue Reading