Steffen Schreyeck

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We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental band gap and the band velocity. In a magnetic field, this model implies a unique(More)
By means of spin- and angle-resolved photoelectron spectroscopy we studied the spin structure of thin films of the topological insulator Bi2Se3 grown on InP(111). For thicknesses below six quintuple layers the spin-polarized metallic topological surface states interact with each other via quantum tunneling and a gap opens. Our measurements show that the(More)
We study nanoscale morphology of PbTe/CdTe multilayer heterostuctures grown by molecular beam epitaxy on hybrid GaAs/CdTe (100) substrates. Nominally, the structures consist of 25 repetitions of subsequently deposited CdTe and PbTe layers with comparable thicknesses of 21 and 8 nm, respectively. However, the morphology of the resulting structures crucially(More)
We study the chemical ordering in Bi2Te3-x Se x grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive x-ray spectroscopy, x-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results,(More)
We report on the scaling behavior of V-doped (Bi,Sb)_{2}Te_{3} samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of(More)
The influence of Sb content, substrate type, and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)2Te3 magnetic topological insulators is investigated. Thin layers showing excellent quantization are reproducibly deposited by molecular beam epitaxy at growth conditions affecting a compromise between controlled layer properties and(More)
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