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concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry" We have measured the dielectric function of bulk nitrogen-doped 4H and 6H SiC substrates from 700 to 4000 cm Ϫ1 using Fourier-transform infrared spectroscopic ellipsometry. Photon absorption by transverse optical phonons produces a strong… (More)
In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond.
Growth reactions based on a newly developed deuterium-stabilized Sn hydride [(Ph)SnD(3)] with Ge(2)H(6) produce a new family of Ge-Sn semiconductors with tunable band gaps and potential applications in high-speed, high-efficiency infrared optoelectronics. Metastable diamond-cubic films of Ge(1-x)Sn(x) alloys are created by chemical vapor deposition at 350… (More)
Optical properties of bulk and thin-film SrTiO 3 on Si and Pt" (2000). We have studied the optical properties ͑complex dielectric function͒ of bulk SrTiO 3 and thin films on Si and Pt using spectroscopic ellipsometry over a very broad spectral range, starting at 0.03 eV ͓using Fourier transform infrared ͑FTIR͒ ellipsometry͔ to 8.7 eV. In the bulk crystals,… (More)