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As much as 1.6-W average output power was emitted in a simple setup from a diffusion-bonded Nd:YAG rod with 70-100-ns Q-switched pulses at 946 nm and repetition frequencies between 15 and 45 kHz at 22-W incident diode-pump power. A Cr(4+):YAG crystal with a bleachable loss of approximately 2.5% and a length of 0.5 mm was used as a saturable absorber. The(More)
A highly accurate method for the determination of the detection efficiency of a silicon single-photon avalanche diode (Si-SPAD) is presented. This method is based on the comparison of the detected count rate of the Si-SPAD compared to the photon rate determined from a calibrated silicon diode using a modified attenuator technique, in which the total(More)
Here we present a reconstruction of the positive operator-value measurement of a photon-number-resolving detector comprised of three 50∶50 beam-splitters in a tree configuration, terminated with four single-photon avalanche detectors. The four detectors' outputs are processed by an electronic board that discriminates detected photon number states from 0 to(More)
Efficient diode pumping at wavelengths of 1.9 and 2.0microm of a Cr(2+): ZnSe laser with an output power of 105 mW and a slope efficiency of 35% with respect to the absorbed pump power is presented. In addition, Cr(2+): CdMnTe has been laser diode pumped as well as operated in the continuous-wave regime, to the best of our knowledge for the first time.
BACKGROUND Silicon single-photon avalanche diodes (Si-SPADs) are the most used devices for measuring ultra-weak optical radiant fluxes in many quantum technology fields, such as quantum optics, quantum communication, quantum computing, etc. In all these fields, the detection efficiency is the main parameter, which has to be accurately known for achieving(More)
The spectral reflectance and responsivity of Ge- and InGaAs-photodiodes at (nearly) normal and oblique incidence (45 degrees) were investigated. The derived data allow a calculation of the photodiodes responsivities for any incident angle. The measurements were carried out with s- and p-polarized radiation in the wavelength range from 1260 to 1640 nm. The(More)
Because of their broadband luminescence, TM-ion-doped materials are of high interest for applications as tunable and short-pulse lasers. Systems with a d1 electron configuration possess only one excited 3d level and excited-state absorption into higher-lying 3d levels is impossible. One of these d1 systems, Ti:sapphire has become the most successful tunable(More)
We report a comparison of laser power measurements at the F2-laser wavelength of 157 nm made at two facilities of the Physikalisch-Technische Bundesanstalt (PTB), the German national metrology institute. At the PTB laboratory at the electron storage ring BESSY II in Berlin, the scale for laser power was directly traced to a cryogenic radiometer operating at(More)
The Mn 6+ ion is a promising activator ion for tunable and short-pulse laser materials because of its broadband luminescence in the spectral region 850-1600 nm and its simple 3d 1 electronic configuration, which excludes an occurrence of undesirable exited-state absorption into higher 3d levels. However, hexavalent manganese can be stabilized only in the(More)
Continuous-wave laser oscillation of Cr(3+):MgO at room temperature was realized under argon-ion laser pumping at 476 and 514 nm. The free-running laser wavelength was 840 nm, and with different mirror sets laser oscillation at 824, 830, 870, and 878 nm was also realized. With different crystals a maximum output power of 48 mW and a lowest threshold with(More)