Stanley Schuster

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Increasing power dissipation has become a major constraint for future performance gains in the design of microprocessors. In this paper, we present the circuit design of an issue queue for a superscalar processor that leverages transmission gate insertion to provide dynamic low-cost configurability of size and speed. A novel circuit structure dynamically(More)
In a circuit environment that is becoming increasingly sensitive to dynamic power dissipation and noise, and where cycle time available for control decisions continues to decrease, locality principles are becoming paramount in controlling advancement of data through pipelined systems. Achieving fine grained power down and progressive pipeline stalls at the(More)
T he productivity of modern society has become inextricably linked to its ability to produce energy-efficient computing technology. Increasingly sophisticated mobile computing systems, powered for hours solely by batteries, continue to proliferate rapidly throughout society, while battery technology improves at a much slower pace. In large data centers that(More)
ABSTRACT Increasing power dissipation has become a major constraint for future performance gains in the design of microprocessors. In this paper, we present the circuit design of an issue queue for a superscalar processor that leverages transmission gate insertion to provide dynamic low-cost con gurability of size and speed. A novel circuit structure(More)
A major consumer of microprocessor power is the issue queue. Several microprocessors, including the Alpha 21264 and POWER4<sup>TM</sup>, use a compacting latch-based issue queue design which has the advantage of simplicity of design and verification. The disadvantage of this structure, however, is its high power dissipation.In this paper, we explore(More)
We present the high-level microarchitecture of LPX: a low-power issue-execute processor prototype that is being designed by a joint industry-academia research team. LPX implements a very small subset of a RISC architecture, with a primary focus on a vector (SIMD) multimedia extension. The objective of this project is to validate some key new ideas in(More)
An n-channel insulated-gate field-effect transistor technology established at IBM Research has served as the basis for further development leading to FET memory. Designs and characteristics of experimental devices of 500 and 1000 A gate insulator thicknesses are presented, with particular attention to the effects of source-drain spacing. Introduction(More)